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V.P. Kladko, S.V. Plyatsko // Semiconductors, V.32 (3), P.235-237, (1998).
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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Our design Publications dep02 dep-02-before On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons
Our design Publications dep02 dep-02-before On the effect of a dopant on the formation of disordered regions in GaAs under irradiation with fast neutrons