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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Research divisions Publications dep02 dep-02-2016 An influence of the local strain on cathodoluminescence of GaN/AlxGa1−xN nanowire structuresAnna Reszka, Aleksandra Wierzbicka, Kamil Sobczak, Uwe Jahn, Ute Zeimer, Andrian V. Kuchuk, Agnieszka Pieniążek, Marta Sobanska, Kamil Klosek, Zbigniew R. Zytkiewicz, and Bogdan J. Kowalski. Journal of Applied Physics, V.120, 194304 (2016).
