V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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dep-07-2015
High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate
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Stanchu H., Kladko V., Kuchuk A., Safriuk N., Belyaev A., Wierzbicka A., Sobanska M., Klosek K., Zytkiewicz Z.R. // Nanoscale Research Letters. – 2015, - V. 10,N2, - P.51-54