V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Depth profiling of strain and carrier concentration by cleaved surface scanning of GaN Gunn-diode: confocal Raman microscopy
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Belyaev A.E., Strelchuk V.V., Nikolenko A.S., Romanyuk A.S., Mazur Yu.I., Ware M.E., DeCuir Jr E.A., Salamo G.J. // Semicond. Sci. Technol. – 2013. – V. 28, N.10. – p. 105011