Modulation phenomena in Si nanowire FETs characterized using noise spectroscopy and gamma radiation technique

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Modulation phenomena in Si nanowire FETs characterized using noise spectroscopy and gamma radiation technique

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Pud S., Vitusevich S.A., Li J., Petrychuk M., Feste S., Danilchenko B., Offenhäusser A., Mantl S. // Journal of Applied Physics.-2013.-V. 113.-P. 124503-1-10

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