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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Research divisions Publications dep02 dep-02-before Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on sapphire substrateV.P. Kladko, O.F. Kolomys, M.V. Slobodian, V.V. Strelchuk, V.G. Raycheva, O.Ye. Belyaev, S.S. Bukalov, H. Hardtdegen, V.A. Sydoruk, N. Klein and S.A. Vitusevich // Journal of Applied Physics, V.105. Issue 6. P.063515(9) (2009). http://dx.doi.org/10.1063/1.3094022
