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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Research divisions Publications dep02 dep-02-2017 Effect of well/barrier thickness ratio on strain relaxation in GaN/AlN superlattices grown on GaN/sapphire templateSerhii B. Kryvyi, Petro M. Lytvyn, Vasyl P. Kladko, Hryhorii V. Stanchu, Andrian V. Kuchuk, Yuriy. I. Mazur, Gregory J. Salamo, Shibin Li, Pavlo P. Kogutyuk, and Alexander E. Belyaev. // Journal of Vacuum Science & Technology B, V.35, Issue 6, 062902 (2017). http://dx.doi.org/10.1116/1.4999468
