Advanced performance and scalability of Si nanowire field-effect transistors analyzed using noise spectroscopy and gamma radiation techniques

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Li J., M. V. Petrychuk, Pud S., Offenhäusser A., Danilchenko B.A., Vitusevich S.A. // Journ.Appl.Phys.-2013.-V.114.- N.20.-P.203704-1-10

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