Vacancy-related defects in ion-beam and electron irradiated 6H-SiC

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

V.Ya. Bratus', T.T. Petrenko, H.J. von Bardeleben, E.V. Kalinina, A. Hallen // Applied Surface Science V. 184, N. 1-4, P. 229-236 (2001)

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