V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Measuring the depth profiles of strain/composition in AlGaN-graded layer by high-resolution x-ray diffraction
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Kuchuk A.V., Stanchu H.V., Chen Li, Ware M.E., Mazur Yu.I., Kladko V.P., Belyaev A.E., Salamo G.J. // Journal of Applied Physics – 2014 – V.116 – Issue 22, 224302