Gigantic uphill diffusion during self-assembled growth of Ge quantum dots on strained SiGe sublayers

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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M.Ya.Valakh, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Z.F. Krasilnik, D.N. Lobanov, A.V. Novikov // Appl. Phys. Lett. 96, 141909 (2010).

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