The nanometer scaled defects induces with the dislocation motion in II-VI insulated semiconductors

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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V.N. Babentsov, V.A. Boyko, A.F. Kolomys, G.A. Shepelski, V.V. Strelchuk and N.I. Tarbaev // Advanced Materials Research 276, pp 195-202 (2011).

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