 |
V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
|
Our design Publications dep02 dep-02-before Role of dislocations in formation of ohmic contacts to heavily doped n-Si A.E. Belyaev, V.A. Pilipenko, V.M. Anischik, T.V. Petlinskaya, A.V. Sachenko, V.P. Kladko, R.V. Konakova, N.S. Boltovets, і інші. // Semicoductor Physics, Quantum Electronics & Optoelectronics, V.16, N2, P.99-110 (2013). http://journal-spqeo.org.ua/n2_2013/v16n2-2013-p099-110.pdf
