Mechanism of strain-influenced quantum well thickness reduction in GaN-AlN short-period superlattices

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Mechanism of strain-influenced quantum well thickness reduction in GaN-AlN short-period superlattices

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Kuchuk A.V., Kladko V.P., Petrenko T.L., Bryksa V.P., Belyaev A.E., Mazur Yu.A., Ware M.E., DeCuirJr E.A., Salamo G.J. // Nanotecnology, 2014, v. 25, p. 245602

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