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V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine
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Research divisions Publications dep02 dep-02-before Influence of Carbon Layer on the Properties of Ni-Based Ohmic Contact to n-Type 4H-SiC
A. Kuchuk, V. Kladko, Z. Adamus, M. Wzorek, M. Borysiewicz, P. Borowicz, A. Barcz, K. Golaszewska and A. Piotrowska // ISRN Electronics, vol.2013, Article ID 271658, 5 pages (2013). http://x-ray.net.ua/downloads/prints/papers/xray_362.pdf
