Charge trapping in Si-implanted SiO2-Si memory devices at high electric fields and elevated temperatures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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V. I. Turchanikov, A. N. Nazarov, V. S. Lysenko, J. Carreras and B. Garrido, Journal of Physics: Conference Series, vol. 10, pp.409–412 (2005)

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