The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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The influence of acoustic-dislocation interaction on intensity of the bound exciton recombination in initial and irradiated GaAsP LEDs structures

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O.V.Konoreva, Ya. M.Olikh, M.B.Pinkovska, O.I.Radkevych, V.P.Tartachnyk, V.V.Shlapatska // Superlattices and Microstructures, Volume 102, 2017, Pages 88-93

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