Hydrogen-enhanced transformation of electrical and structural properties of thin subsurface ion implanted silicon layer in SiO2-Si systems

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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E.I. Terukov, B.J. Ber, V.Kh. Kudoyarova, V.Yu. Davydov, A.N. Nazarov, Ja.N. Vovk, and S. Ashok, Solid State Phenomena, vol. 69-70, pp. 595-600 (1999)

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