Double-gated Si NW FET sensors: Low-frequency noise and photoelectric properties

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

Gasparyan F, Khondkaryan H., Arakelyan A., Zadorozhnyi I., Pud S., Vitusevich S. // J. Appl. Phys.-2016.- V.120.- N.6.-P. 064902-1-8

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