Drift correction of the analyzed area during the study of lateral elemental composition distribution in single semiconductor nanostructures by scanning Auger microscopy

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

S.S. Ponomaryov, V.O. Yukhymchuk, M. Ya. Valakh // Semiconductor Physics, Quantum Electronics and Optoelectronics, 2016, V. 19, N 4.

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