AlGaN/GaN high electron mobility transistor structures: Self-heating effect and performance degradation

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

S. Vitusevich, A. Kurakin, N. Klein, M. Petrychuk, A. Naumov, A. Belyaev // IEEE Trans. Dev. Mater. Rel., Vol. 8, Issue 3, 543–548 (2008)

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