A new approach to grow C-doped GaN thick epitaxial layers

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

D. Gogova, G.Yu. Rudko, D. Siche, M. Albrecht, K. Irmscher, H.-J. Rost, R. Fornari // Physica status solidi (c) V. 7-8, P. 2120–2122 (2011)

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