A study of defects of the structure of epitaxial layers of silicon carbide

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

S. F. Avramenko, M. Ya.Valakh, V. S. Kiselev, M. Ya. Skorokhod // Met.Phys.Adv.Tech. V. 18, P. 29-38 (1999)

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