Influence of pre-annealing on NO3 centers in synthetic hydroxyapatite

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

V.V. Nosenko, I.P. Vorona, S.S. Ishchenko, N.P. Baran, I.V. Zatovsky, N.A. Gorodilova, V.Yu. Povarchuk // Rad. Meas, V. 47, P. 970 (2012)

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