InAs/InGaAs quantum dots confined by InAlAs barriers for enhanced room temperature light emission: Photoelectric properties and deep levels

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

S.Golovynskyi, O.I. Datsenko, L.Seravalli, G.Trevisi, P.Frigeri, B.Li, D. Lin, Ju.Qu. // Microelectronic Engineering. - 2021. - V. 238, p. 111514

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