V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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Safriuk N.V., Stachu G.V., Kuchuk A.V., Kladko V.P., Belyaev A.E.,Machulin V.F. X-ray diffraction investigation of GaN layers on Si (1 1 1) and Al2O3 (0 0 0 1) substrates // Semiconductor Physics. Quantum Electronics & Optoelectronics, 2014, v. 16, p. 265-272