Influence of an accumulation back-gate voltage on the low-frequency noise spectra of 0.13m fully-depleted SOI MOSFETs fabricated on ELTRAN and UNIBOND wafers

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

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N. Lukyanchikova, N. Garbar, A. Smolanka, E. Simoen, C. Claeys // Pros. of the 34th European Solid-State Device Research Conference ISSDERC 2004, pp. 357-360.

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