The influence of oxidation process on the photoluminescence efficiency and spectra of porous silicon

V. Lashkaryov Institute of Semiconductor Physics of National Academy of Sciences of Ukraine

B.M. Bulakh, N.E. Korsunska, L.Yu. Khomenkova, T. Stara, M. Sheinkman // Semiconductors. – 2006. - V.40. –P.614-619.

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